High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
Abstract Metal-assisted chemical etching (MaCE), igora vibrance 4-99 a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity.He